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BFR520 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BFR520 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() September 1995 7 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 Fig.10 Minimum noise figure and associated available gain as functions of collector current. VCE = 6 V. handbook, halfpage 5 0 1 2 5 0 −5 10 Gass (dB) 15 20 3 Fmin (dB) IC (mA) 4 MRA714 1 102 10 2000 MHz 1000 MHz 2000 MHz 1000 MHz f = 900 MHz Gass Fmin 900 MHz 500 MHz Fig.11 Minimum noise figure and associated available gain as functions of frequency. VCE = 6 V. handbook, halfpage 5 0 1 2 5 0 −5 10 Gass (dB) 15 20 3 Fmin (dB) f (MHz) 4 MRA715 102 104 103 Gass 20 mA 5 mA Fmin 20 mA IC = 5 mA handbook, full pagewidth MRA716 0 0.2 0.6 0.4 0.8 1.0 1.0 5 2 1 0.5 0.2 0 0.2 0.5 1 2 5 0.2 0.5 2 5 180 ° −135° −90° −45° 0 ° 45 ° 90 ° 135 ° stability circle pot. unst. region F = 3 dB F = 2 dB F = 1.5 dB 1 Fmin = 1. 1 dB ΓOPT Fig.12 Noise circle figure. Zo =50 Ω. VCE = 6 V; IC = 5 mA; f = 900 MHz. |
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