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BFR520 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFR520 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() September 1995 3 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR520 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE Note 1. Ts is the temperature at the soldering point of the collector tab. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCES collector-emitter voltage RBE =0 − 15 V VEBO emitter-base voltage open collector − 2.5 V IC DC collector current − 70 mA Ptot total power dissipation up to Ts =97 °C; note 1 − 300 mW Tstg storage temperature −65 150 °C Tj junction temperature − 175 °C SYMBOL PARAMETER THERMAL RESISTANCE Rth j-s from junction to soldering point (note 1) 260 K/W |
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