BFT25 datasheet(2/8 Pages) PHILIPS

2 / 8 page

November 1992

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz wideband transistor

BFT25

DESCRIPTION

NPN transistor in a plastic SOT23

envelope.

It is primarily intended for use in RF

low power amplifiers, such as in

pocket phones, paging systems, etc.

The transistor features low current

consumption (100

µA to 1 mA); due to

its high transition frequency, it also

has excellent wideband properties

and low noise up to high frequencies.

PINNING

DESCRIPTION

Code: V1p

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

DC collector current

−

6.5

Ptot

total power dissipation

up to Ts = 167 °C; note 1

−

transition frequency

IC = 1 mA; VCE = 1 V; f = 500 MHz;

Tamb =25 °C

2.3

−

GHz

Cre

feedback capacitance

IC = 1 mA; VCE = 1 V; f = 1 MHz;

Tamb =25 °C

−

0.45

GUM

maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz;

Tamb =25 °C

−

noise ﬁgure

IC = 1 mA; VCE = 1 V; f = 500 MHz;

Tamb =25 °C

3.8

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

DC collector current

−

6.5

ICM

peak collector current

> 1 MHz

−

Ptot

total power dissipation

up to Ts = 167 °C; note 1

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

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