BFT25 datasheet(3/8 Pages) PHILIPS

3 / 8 page

November 1992

Philips Semiconductors

Product speciﬁcation

NPN 2 GHz wideband transistor

BFT25

THERMAL RESISTANCE

Note

1. Ts = is the temperature at the soldering point of the collector tab.

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL

PARAMETER

CONDITIONS

THERMAL RESISTANCE

Rth j-s

thermal resistance from junction to

soldering point

up to Ts = 167°C; note 1

260 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 5 V

−−

hFE

DC current gain

IC = 10 µA; VCE = 1 V

−

IC = 1 mA; VCE = 1 V

−

transition frequency

IC = 1 mA; VCE = 1 V; f = 500 MHz

1.2

2.3

−

GHz

collector capacitance

IE =ie = 0; VCB = 0.5 V; f = 1 MHz

−−

0.6

emitter capacitance

Ic =ic =0;VEB = 0; f = 1 MHz

−−

0.5

Cre

feedback capacitance

IC = 1 mA; VCE = 1 V; f = 1 MHz;

Tamb =25 °C

−−

0.45

GUM

maximum unilateral power gain

(note 1)

IC = 1 mA; VCE = 1 V; f = 500 MHz;

Tamb =25 °C

−

IC = 1 mA; VCE = 1 V; f = 800 MHz;

Tamb =25 °C

−

noise ﬁgure

IC = 0.1 mA; VCE =1V;

f = 500 MHz; Tamb =25 °C

−

5.5

−

IC = 1 mA; VCE = 1 V; f = 500 MHz;

Tamb =25 °C

−

3.8

−

10 log

–





–





--------------------------------------------------------------

dB.

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