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BFT92 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFT92 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 8 page ![]() November 1992 5 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT92 Fig.2 Intermodulation distortion test circuit. L2 = L3 = 5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. handbook, halfpage MEA919 16 Ω L2 680 pF 300 Ω DUT L1 680 pF 680 pF 24 V 3.9 k Ω 820 Ω 75 Ω 75 Ω 390 Ω L3 Fig.3 DC current gain as a function of collector current. VCE = −10 V; Tj =25 °C. handbook, halfpage MEA347 0 100 75 25 0 10 20 –I (mA) C FE h 50 30 Fig.4 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz; Tj =25 °C. handbook, halfpage 010 1 0 0.8 MEA920 0.6 0.4 0.2 C c (pF) –V CB (V) 20 Fig.5 Transition frequency as a function of collector current. VCE = −10 V; f = 500 MHz; Tj =25 °C. handbook, halfpage 010 20 30 6 0 2 4 MEA344 –I (mA) C f T (GHz) |
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