BFT92 datasheet(4/8 Pages) PHILIPS

4 / 8 page

November 1992

Philips Semiconductors

Product speciﬁcation

PNP 5 GHz wideband transistor

BFT92

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. dim = −60 dB (DIN 45004B); IC = −14 mA; VCE = −10 V; RL =75 Ω;

Vp =Vo at dim = −60 dB; fp = 495.25 MHz;

Vq =Vo −6 dB; fq = 503.25 MHz;

Vr =Vo −6 dB; fr = 505.25 MHz;

measured at f(p+q-r) = 493.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −10 V;

−−−50

hFE

DC current gain

IC = −14 mA; VCE = −10 V

−

transition frequency

IC = −14 mA; VCE = −10 V;

f = 500 MHz

−

GHz

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

0.75

−

emitter capacitance

IC =ic = 0; VEB = −0.5 V; f = 1 MHz

−

0.8

−

Cre

feedback capacitance

IC = −2 mA; VCE = −10 V; f = 1 MHz

−

0.7

−

GUM

maximum unilateral power gain

(note 1)

IC = −14 mA; VCE = −10 V;

f = 500 MHz; Tamb =25 °C

−

noise ﬁgure

IC = −5 mA; VCE = −10 V;

f = 500 MHz; Tamb =25 °C

−

2.5

−

output voltage

note 2

−

150

−

–





–





--------------------------------------------------------------

dB.

log

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