BFT92 datasheet(2/8 Pages) PHILIPS

2 / 8 page

November 1992

Philips Semiconductors

Product speciﬁcation

PNP 5 GHz wideband transistor

BFT92

DESCRIPTION

PNP transistor in a plastic SOT23

envelope.

It is primarily intended for use in RF

wideband amplifiers, such as in aerial

amplifiers, radar systems,

oscilloscopes, spectrum analyzers,

etc. The transistor features low

intermodulation distortion and high

power gain; due to its very high

transition frequency, it also has

excellent wideband properties and

low noise up to high frequencies.

NPN complements are BFR92 and

BFR92A.

PINNING

DESCRIPTION

Code: W1p

base

emitter

collector

Fig.1 SOT23.

fpage

MSB003

Top view

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−20

VCEO

collector-emitter voltage

open base

−−15

DC collector current

−−25

Ptot

total power dissipation

up to Ts = 95 °C; note 1

−

300

transition frequency

IC = −14 mA; VCE = −10 V; f = 500 MHz

−

GHz

Cre

feedback capacitance

IC = −2 mA; VCE = −10 V; f = 1 MHz

0.7

−

GUM

maximum unilateral power gain

IC = −14 mA; VCE = −10 V;

f = 500 MHz; Tamb =25 °C

−

noise ﬁgure

IC = −5 mA; VCE = −10 V; f = 500 MHz;

Tamb =25 °C

2.5

−

dim

intermodulation distortion

IC = −14 mA; VCE = −10 V; RL =75 Ω;

Vo = 150 mV; Tamb =25 °C;

f(p+q-r) = 493.25 MHz

−60

−

BFT92 Datasheet(PDF) 2 Page - NXP Semiconductors

BFT92 Datasheet(HTML) 2 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL