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BFT92W Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFT92W Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() May 1994 5 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W Fig.6 Gain as a function of collector current, typical values. f = 500 MHz; VCE = −10 V. MSG = maximum stable gain. 0 30 20 10 0 10 20 MLB544 30 gain (dB) I (mA) C G UM MSG Fig.7 Gain as a function of collector current, typical values. f = 1 GHz; VCE = −10 V. MSG = maximum stable gain. 0 30 20 10 0 10 20 MLB545 30 gain (dB) I (mA) C MSG G UM Fig.8 Gain as a function of frequency, typical values. IC = −5 mA; VCE = −10 V. MSG = maximum stable gain. 50 0 10 MLB546 10 2 10 3 10 4 10 20 30 40 gain (dB) f (MHz) G UM MSG G max Fig.9 Gain as a function of frequency, typical values. IC = −15 mA; VCE = −10 V. MSG = maximum stable gain. 50 0 10 MLB547 10 2 10 3 10 4 10 20 30 40 gain (dB) f (MHz) G UM MSG G max |
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