BFT92W datasheet(3/12 Pages) PHILIPS

3 / 12 page

May 1994

Philips Semiconductors

Product speciﬁcation

PNP 4 GHz wideband transistor

BFT92W

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note to the “Limiting values” and “Thermal characteristics”

1. Ts is the temperature at the soldering point of the collector pin.

CHARACTERISTICS

Tj =25 °C (unless otherwise speciﬁed).

Note

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−20

VCEO

collector-emitter voltage

open base

−−15

VEBO

emitter-base voltage

open collector

−−2V

collector current (DC)

−−25

Ptot

total power dissipation

up to Ts =93 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

up to Ts =93 °C; note 1

190

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −10 V

−−−50

hFE

DC current gain

IC = −15 mA; VCE = −10 V

−

transition frequency

IC = −15 mA; VCE = −10 V;

f = 500 MHz; Tamb =25 °C

−

GHz

collector capacitance

IE =ie = 0; VCB = −10 V;

f = 1 MHz

−

0.65

−

emitter capacitance

IC =ic = 0; VEB = −0.5 V;

f = 1 MHz

−

0.75

−

Cre

feedback capacitance

IC = 0; VCB = −10 V;

f = 1 MHz

−

0.5

−

GUM

maximum unilateral power gain;

note 1

IC = −15 mA; VCE = −10 V;

f = 500 MHz; Tamb =25 °C

−

IC = −15 mA; VCE = −10 V;

f = 1 GHz; Tamb =25 °C

−

noise ﬁgure

Γs = Γopt; IC = −5 mA;

VCE = −10 V; f = 500 MHz

−

2.5

−

Γs = Γopt; IC = −5 mA;

VCE = −10 V; f = 1 GHz

−

–

() 1s

–

()

------------------------------------------------------------ dB.

log

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