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BFT93 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFT93 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 8 page ![]() November 1992 5 Philips Semiconductors Product specification PNP 5 GHz wideband transistor BFT93 Fig.2 Intermodulation distortion test circuit. L2 = L3 = 5 µH Ferroxcube choke, catalogue number 3122 108 20150. L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm. handbook, halfpage MEA383 16 Ω L2 680 pF input 75 Ω 240 Ω 680 pF 680 pF DUT output 75 Ω L1 L3 1.2 k Ω 560 Ω 24 V 390 Ω Fig.3 DC current gain as a function of collector current. VCE = −5 V; Tj =25 °C. handbook, halfpage 0 60 40 20 10 20 40 MEA382 30 –I (mA) C FE h 10 Fig.4 Collector capacitance as a function of collector-base voltage. IE =ie = 0; f = 1 MHz; Tj =25 °C. handbook, halfpage MEA925 016 2.0 0 1.6 20 1.2 0.4 C c (pF) VCB (V) 4 0.8 812 Fig.5 Transition frequency as a function of collector current. VCE = −5 V; f = 500 MHz; Tj =25 °C. handbook, halfpage MEA381 010 20 40 6 0 4 –I (mA) C f T (GHz) 2 30 |
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