BFT93 datasheet(4/8 Pages) PHILIPS

4 / 8 page

November 1992

Philips Semiconductors

Product speciﬁcation

PNP 5 GHz wideband transistor

BFT93

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

Notes

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

2. dim = −60 dB (DIN 45004B); IC = −30 mA; VCE = −5 V; RL =75 Ω;

Vp =Vo at dim = −60 dB; fp = 495.25 MHz;

Vq =Vo −6 dB; fq = 503.25 MHz;

Vr =Vo −6 dB; fr = 505.25 MHz;

measured at f(p+q−r) = 493.25 MHz.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = −5 V

−−

−50

hFE

DC current gain

IC = −30 mA; VCE = −5 V

−

transition frequency

IC = −30 mA; VCE = −5 V;

f = 500 MHz

−

GHz

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

0.95

−

emitter capacitance

Ic =ic =0;VEB = −0.5 V; f = 1 MHz

−

1.8

−

Cre

feedback capacitance

IC = −2 mA; VCE = −5 V; f = 1 MHz

−

GUM

maximum unilateral power gain

(note 1)

IC = −30 mA; VCE = −5V;

f = 500 MHz; Tamb =25 °C

−

16.5

−

noise ﬁgure

IC = −10 mA; VCE = −5V;

f = 500 MHz; Tamb =25 °C

−

2.4

−

output voltage

see Fig.2 and note 2

−

300

−

10 log

–





–





--------------------------------------------------------------

dB.

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