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BGY2016 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGY2016 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 2000 Jan 04 2 Philips Semiconductors Product specification UHF amplifier module BGY2016 FEATURES • 26 V nominal supply voltage • 16 W output power into a load of 50 Ω with an RF drive power of ≤20 mW. APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1990 MHz frequency band. DESCRIPTION The BGY2016 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate. PINNING - SOT365A PIN DESCRIPTION 1 RF input 2VS1 3VS2 4 RF output Flange ground handbook, halfpage MSA447 2 13 4 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb =25 °C. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). MODE OF OPERATION f (MHz) VS1 (V) VS2 (V) PL (W) Gp (dB) η (%) ZS; ZL ( Ω) CW 1805 to 1990 5 26 ≥16 ≥28 ≥30 50 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS1 DC supply voltage 4.5 5.5 V VS2 DC supply voltage − 28 V PD input drive power − 120 mW PL load power Tmb =25 °C − 20 W Tstg storage temperature −30 +100 °C Tmb operating mounting base temperature −10 +90 °C |
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