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BGY2016 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BGY2016
Description  UHF amplifier module
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGY2016 Datasheet(HTML) 3 Page - NXP Semiconductors

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2000 Jan 04
3
Philips Semiconductors
Product specification
UHF amplifier module
BGY2016
CHARACTERISTICS
Tmb =25 °C; VS1 =5V; VS2 = 26 V; PL = 16 W; ZS =ZL =50 Ω unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f
frequency
1805
1990
MHz
IS1
supply current
80
mA
IS2
supply current
PD < −60 dBm
430
mA
PL
load power
PD <20mW
16
−−
W
Gp
power gain
28
35
dB
∆Gp
in band gain variation
f = 1805 to 1880 MHz; PL =5W
−−
2dB
f = 1930 to 1990 MHz; PL =5W
−−
2dB
Gp1 -Gp2
gain expansion
Gp1 at PL = 160 mW;
Gp2 at PL =5mW
−−±1dB
η
efficiency
PL =16W
30
−−
%
H2
second harmonic
PL =16W
−−−35
dBc
H3
third harmonic
PL =16W
−−−40
dBc
VSWRin
input VSWR
−−
2:1
stability
VSWR
≤ 2 : 1 through all phases;
PL ≤ 16 W; VS2 =25to27V
−−−60
dBc
reverse intermodulation
Pcarrier = 16 W; Preverse = −40 dBc;
fi =fc ±200 kHz
−−−53
dBc
B
AM bandwidth
corner frequency=3dB;
Pcarrier = 16 W; modulation = 20%
2
−−
MHz
ruggedness
VSWR
≤ 5 : 1 through all phases
no degradation



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