T2550H datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

Characteristics

T2550H

2/8

Characteristics

Table 2.

Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Symbol

Test Conditions

Quadrant

Value

Unit

IGT

(1)

minimum IGT is guaranted at 10% of IGT max.

VD = 12 V RL = 33 Ω

I - II - III

MAX.

VGT

I - II - III

MAX.

1.3

VGD

VD = VDRM RL = 3.3 kΩ Tj = 150° C

I - II - III

MIN.

0.15

(2)

for both polarities of A2 referenced to A1.

IT = 500 mA

MAX.

IG = 1.2 IGT

I - II - III

MAX.

dV/dt(2)

VD = 67% VDRM gate open Tj = 150° C

MIN.

500

V/µs

(dI/dt)c(2) Without snubber

Tj = 150° C

MIN.

11.1

A/ms

Table 3.

Static Characteristics

Symbol

Test Conditions

Value

Unit

(1)

for both polarities of A2 referenced to A1.

ITM = 35 A

tp = 380 µs

Tj = 25°C

MAX.

1.5

Vto

(1)

Threshold voltage

Tj = 150°C

MAX.

0.80

(1)

Dynamic resistance

Tj = 150°C

MAX.

Ω

IDRM

IRRM

VDRM = VRRM

Tj = 25°C

MAX.

5µA

Tj = 150°C

8.5

VDRM/VRRM = 400 V

(at mains peak voltage)

Tj = 150°C

5.5

Table 4.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

0.8

°C/W

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