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T2550H Datasheet(PDF) 3 Page - STMicroelectronics |
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T2550H Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 8 page ![]() T2550H Characteristics 3/8 Figure 1. Maximum power dissipation versus RMS on-state current (full cycle) Figure 2. RMS on-state current versus case temperature (full cycle) 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 22.5 25.0 0 5 10 15 20 25 30 35 P(W) I (A) T(RMS) 0 25 50 75 100 125 150 0 5 10 15 20 25 30 I (A) T(RMS) T (°C) C Figure 3. Relative variation of thermal impedance versus pulse duration Figure 4. On-state characteristics (maximum values) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.10 1.00 K=[Z /R th th] t (s) p Zth(j-c) Zth(j-a) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 300 I (A) TM V (V) TM T= j T max. j T = 25°C j . T max. V = 0.80V R = 19 m j t0 d Ω Figure 5. Surge peak on-state current versus number of cycles Figure 6. Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t 1 10 100 1000 0 50 100 150 200 250 300 I (A) TSM Number of cycles t=20ms One cycle Non repetitive T initial=25°C j Repetitive T =125°C C 100 1000 10000 0.01 0.10 1.00 10.00 Tj initial=25 °C dI/dt limitation: 50 A/µs I TSM I²t t (ms) p I (A), I t (A s) TSM 22 |
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