T2550H datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

Characteristics

T2550H

4/8

Figure 7.

Relative variation of gate trigger

current, holding current and

latching current versus junction

temperature (typical values)

Figure 8.

Relative variation of critical rate of

decrease of main current versus

(dV/dt)c (typical values)

-40

-20

100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I ,I [T ] /

GT H L

,I ,I [T =25°C]

GT H L

IGT

IH & IL

0.1

1.0

10.0

100.0

0.6

0.8

1.0

1.2

1.4

1.6

(dV/dt)c (V/µs)

(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c

Figure 9.

Relative variation of critical rate of

decrease of main current versus

junction temperature

Figure 10.

Leakage current versus junction

temperature for different values of

blocking voltage (typical values)

Figure 11.

Acceptable repetitive peak off-state

voltage versus case-ambient

thermal resistance

100

125

150

(dI/dt)c [T ] /

]

(dI/dt)c [T = 150°C

T (°C)

100

125

150

1E-3

1E-2

1E-1

1E+0

1E+1

/ I

(mA)

DRM

RRM

T (°C)

V = V = 200V

V = V = 400V

V = V = 600V

(°C/W)

th(c-a)

300

350

400

450

500

550

600

th(j-c)=0.8 °C/W

TJ=150 °C

V/ V(V)

DRM

RRM

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