2000 Feb 17

2

Philips Semiconductors

Preliminary specification

UHF push-pull power LDMOS transistor

BLF2048

FEATURES

• High power gain

• Easy power control

• Excellent ruggedness

• Source on underside eliminates DC isolators, reducing

common mode inductance

• Designed for broadband operation (HF to 2.2 GHz).

APPLICATIONS

• Common source class-AB operation for PCN and PCS

applications in the 1800 to 2200 MHz frequency range.

DESCRIPTION

Push-pull silicon N-channel enhancement mode lateral

D-MOS transistor encapsulated in a 4-lead flange package

(SOT539A) with a ceramic cap. The common source is

connected to the mounting flange.

PINNING - SOT539A

PIN

DESCRIPTION

1

drain 1

2

drain 2

3

gate 1

4

gate 2

5

source connected to flange

5

12

4

3

Top view

MBK880

Fig.1 Simplified outline.

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

η

D

(%)

(dBc)

2-tone, class-AB

26

120 (PEP)

>10

>30

≤−26

28

140 (PEP)

typ. 11.2

typ. 31

typ.

−25

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

gate-source voltage

−±15

V

drain current (DC)

−

18

A

storage temperature

−65

+150

°C

junction temperature

−

200

°C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport

and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.