BLF2048 datasheet(4/12 Pages) PHILIPS

4 / 12 page

2000 Feb 17

Philips Semiconductors

Preliminary speciﬁcation

UHF push-pull power LDMOS transistor

BLF2048

handbook, halfpage

200

MGT007

120

160

PL (PEP) (W)

(%)

(dB)

VDS = 26 V

28 V

26 V

Fig.2

Power gain and drain efficiency as functions of

peak envelope load power; typical values.

f1 = 2000 MHz; f2 = 2000.1 MHz;

IDQ = 2 x 400 mA; Th ≤ 25 °C.

handbook, halfpage

200

MGT008

120

160

PL (PEP) (W)

(%)

(dB)

VDS = 26 V

28 V

26 V

Fig.3

Power gain and drain efficiency as functions of

peak envelope load power; typical values.

f1 = 2200 MHz; f2 = 2200.1 MHz;

IDQ = 2 x 400 mA; Th ≤ 25 °C.

handbook, halfpage

−10

−60

−50

MGT009

−40

−30

−20

200

120

160

PL (PEP) (W)

dim

(dBc)

VDS = 26 V

28 V

26 V

f1 = 2000 MHz; f2 = 2000.1 MHz;

IDQ = 2 x 400 mA; Th ≤ 25 °C.

Fig.4

Intermodulation distortion as a function of

peak envelope load power; typical values.

handbook, halfpage

−10

−60

−50

MGT010

−40

−30

−20

200

120

160

PL (PEP) (W)

dim

(dBc)

VDS = 26 V

28 V

26 V

28 V

f1 = 2200 MHz; f2 = 2200.1 MHz;

IDQ = 2 x 400 mA; Th ≤ 25 °C.

Fig.5

Intermodulation distortion as a function of

peak envelope load power; typical values.

BLF2048 Datasheet(PDF) 4 Page - NXP Semiconductors

BLF2048 Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL