BLF2048 datasheet(3/12 Pages) PHILIPS

3 / 12 page

2000 Feb 17

Philips Semiconductors

Preliminary speciﬁcation

UHF push-pull power LDMOS transistor

BLF2048

THERMAL CHARACTERISTICS

Note

1. Thermal resistance is determined under nominal 2-tone RF operating conditions.

CHARACTERISTICS

Tj =25 °C; per section unless otherwise speciﬁed.

Note

1. Capacitance of die only.

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th =25 °C; Rth j-h = 0.5 K/W; unless otherwise speciﬁed.

Ruggedness in class-AB operation

The BLF2048 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the

following conditions: VDS = 26 V; f = 2200 MHz, PL = 120 W (CW).

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-mb

thermal resistance from junction to mounting-base

PL = 120 W; Tmb =50 °C, note 1

0.35

K/W

Rth mb-h

thermal resistance from mounting-base to heatsink

0.15

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 1.4 mA

−−

VGSth

gate-source threshold voltage

VDS = 10 V; ID = 140 mA

1.5

−

3.5

IDSS

drain-source leakage current

VGS = 0; VDS =26V

−−

µA

IDSX

drain cut-off current

VGS =VGSth +9V; VDS =10V

−−

IGSS

gate leakage current

VGS = ±15 V; VDS =0

−−

250

gfs

forward transconductance

VDS = 10 V; ID =5A

−

RDSon

drain-source on-state resistance

VGS =VGSth +9V; ID =5A

−

0.17

−Ω

Crs

feedback capacitance

VGS =0; VDS = 26 V; f = 1 MHz;

note 1

−

3.4

−

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

ηD

(%)

dim

(dBc)

2-tone, class-AB

f1 = 2200; f2 = 2200.1

2 x 400

120 (PEP)

>10

>30

≤−26

2 x 400

140 (PEP)

typ. 11.2

typ. 31

typ.

−25

BLF2048 Datasheet(PDF) 3 Page - NXP Semiconductors

BLF2048 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL