September 1992

2

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF245B

FEATURES

• High power gain

• Easy power control

• Good thermal stability

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Dual push-pull silicon N-channel

enhancement mode vertical D-MOS

transistor designed for large signal

amplifier applications in the VHF

frequency range.

The transistor is encapsulated in a

4-lead, SOT279 balanced flange

envelope, with a ceramic cap. The

mounting flange provides the

common source connection for the

transistors.

PINNING - SOT279

PIN

DESCRIPTION

1

gate 1

2

drain 1

3

gate 2

4

drain 2

5

source

PIN CONFIGURATION

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

fpage

14

3

2

5

Top view

MSB018

MBB157

g2

g1

d2

d1

s

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-B

175

28

30

> 14

> 55