September 1992

3

Philips Semiconductors

Product specification

VHF push-pull power MOS transistor

BLF245B

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Per transistor section unless otherwise specified.

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

drain-source voltage

−

65

V

±V

GS

gate-source voltage

−

20

V

DC drain current

−

4.5

A

total power dissipation

both sections equally loaded

−

75

W

storage temperature

−65

150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

THERMAL

RESISTANCE

thermal resistance from

junction to mounting base

total device; both sections equally loaded

2.3 K/W

thermal resistance from

mounting base to heatsink

total device; both sections equally loaded

0.3 K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

handbook, halfpage

MRA922

1

1

10

10

ID

(A)

VDS (V)

(1)

(2)

Fig.3 Power/temperature derating curves.

(1) Continuous operation.

(2) Short-time operation during mismatch.

Total device; both sections equally loaded.

handbook, halfpage

0

40

80

120

040

80

Ptot

(W)

120

Th (

160

(2)

(1)

MRA929