BLV33 datasheet(3/20 Pages) PHILIPS

3 / 20 page

1996 Oct 10

Philips Semiconductors

Product speciﬁcation

VHF linear power transistor

BLV33

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCESM

collector-emitter voltage

VBE =0

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

12.5

IC(AV)

average collector current

−

12.5

ICM

peak collector current

f > 1 MHz

−

Ptot

total power dissipation (DC)

Tmb =25 °C

−

132

Prf

RF power dissipation

f > 1 MHz; Tmb =25 °C

−

165

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-mb(dc)

thermal resistance from junction to

mounting base (DC dissipation)

Pdiss =80W; Tmb =82 °C; Th =70 °C

1.46

K/W

Rth j-mb(rf)

thermal resistance from junction to

mounting base (RF dissipation)

Pdiss =80W; Tmb =82 °C; Th =70 °C

1.17

K/W

Rth mb-h

thermal resistance from mounting

base to heatsink

Pdiss =80W; Tmb =82 °C; Th =70 °C

0.15

K/W

Fig.2 DC SOAR.

(1) Tmb =25 °C.

(2) Th =70 °C.

(3) Second breakdown limit (independent of temperature).

handbook, halfpage

MGG120

102

(1)

110

102

VCE (V)

(A)

(2)

(3)

Fig.3 Power derating curves.

(1) Continuous DC (including RF class-A) operation.

(2) Continuous RF operation.

handbook, halfpage

200

150

100

(2)

(1)

MGG119

100

Ptot

(W)

Th (°C)

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