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BLV910 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BLV910
Description  UHF power transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLV910 Datasheet(HTML) 5 Page - NXP Semiconductors

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1995 Apr 11
5
Philips Semiconductors
Product specification
UHF power transistor
BLV910
APPLICATION INFORMATION
RF performance at Th =25 °C in a common emitter, class-AB test circuit.
Ruggedness in class-AB operation
The BLV910 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated
output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 25 mA; Tmb =25 °C.
MODE OF OPERATION
f
(MHz)
VCE
(V)
ICQ
(mA)
PL
(W)
Gp
(dB)
ηC
(%)
CW, class-AB
960
26
25
10
≥11
≥55
Fig.6
Power gain and efficiency as functions of
load power; typical values.
VCE =26V.
ICQ =25mA.
f = 960 MHz.
handbook, halfpage
04
8
16
0
MLC662
12
16
8
P
(W)
L
80
40
60
20
0
4
12
η
(%)
η
G p
(dB)
G p
VCE =26V.
ICQ =25mA.
f = 960 MHz.
Fig.7
Load power as a function of input power;
typical values.
handbook, halfpage
0
0.4
0.8
1.6
1.2
16
12
4
0
8
MLC663
P L
(W)
P (W)
i



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