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BLV910 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLV910 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 12 page ![]() 1995 Apr 11 5 Philips Semiconductors Product specification UHF power transistor BLV910 APPLICATION INFORMATION RF performance at Th =25 °C in a common emitter, class-AB test circuit. Ruggedness in class-AB operation The BLV910 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases at rated output power, under the following conditions: VCE = 26 V; f = 960 MHz; ICQ = 25 mA; Tmb =25 °C. MODE OF OPERATION f (MHz) VCE (V) ICQ (mA) PL (W) Gp (dB) ηC (%) CW, class-AB 960 26 25 10 ≥11 ≥55 Fig.6 Power gain and efficiency as functions of load power; typical values. VCE =26V. ICQ =25mA. f = 960 MHz. handbook, halfpage 04 8 16 0 MLC662 12 16 8 P (W) L 80 40 60 20 0 4 12 η (%) η G p (dB) G p VCE =26V. ICQ =25mA. f = 960 MHz. Fig.7 Load power as a function of input power; typical values. handbook, halfpage 0 0.4 0.8 1.6 1.2 16 12 4 0 8 MLC663 P L (W) P (W) i |
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