September 1991

3

Philips Semiconductors

Product specification

UHF power transistor

BLV99/SL

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

50

V

collector-emitter voltage

open base

−

27

V

emitter-base voltage

open collector

−

3.5

V

collector current

DC value

−

200

mA

collector current

peak value

f

> 1 MHz

−

600

mA

total power dissipation

f

> 1 MHz;

−

6W

storage temperature range

−65

150

°C

junction operating temperature

−

200

°C

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

from junction to mounting base

20

K/W

Fig.2 Power/temperature derating curves.

(I) Continuous RF operation.

(II) Short time operation during mismatch.

handbook, halfpage

0

40

80

160

Th (°C)

Ptot

(W)

12

0

4

8

120

MBK466

Ι

ΙΙ