March 1993

2

Philips Semiconductors

Product specification

VHF power transistor

BLW60C

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B and C operated mobile, industrial

and military transmitters with a

nominal supply voltage of 12,5 V. The

transistor is resistance stabilized and

is guaranteed to withstand severe

load mismatch conditions with a

supply over-voltage to 16,5 V.

request.

It has a 3/8" capstan envelope with a

ceramic cap. All leads are isolated

from the stud.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

η

%

Ω

Ω

dB

c.w. (class-B)

12,5

175

45

> 5,0

> 75

1,2

+ j1,4

2,6

− j1,2

−

s.s.b. (class-AB)

12,5 1,6-28

3-30 (P.E.P.) typ. 19,5

typ. 35

−−

typ.

−33

PIN CONFIGURATION

Fig.1 Simplified outline. SOT120A.

handbook, halfpage

MSB056

2

3

1

4

PINNING - SOT120A.

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.