BLW60C datasheet(4/15 Pages) PHILIPS

4 / 15 page

March 1993

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLW60C

CHARACTERISTICS

Tj =25 °C

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ≤ 0,02.

Breakdown voltage

Collector-emitter voltage

VBE =0;IC =50mA

V(BR)CES

36 V

Collector-emitter voltage

open base; IC = 100 mA

V(BR)CEO

16 V

Emitter-base voltage

open collector; IE =25mA

V(BR)EBO

Collector cut-off current

VBE =0;VCE =15V

ICES

25 mA

Transient energy

L = 25 mH; f = 50 Hz

open base

8ms

−VBE = 1,5 V; RBE =33 Ω

8ms

D.C. current gain (1)

IC = 4 A; VCE =5V

hFE

typ

D.C. current gain ratio of matched devices (1)

IC = 4 A; VCE =5V

hFE1/hFE2

1,2

Collector-emitter saturation voltage (1)

IC = 12,5 A; IB = 2,5 A

VCEsat

typ

1,5 V

Transition frequency at f = 100 MHz (1)

IC = 4 A; VCE = 12,5 V

typ

650 MHz

IC = 12,5 A; VCE = 12,5 V

typ

600 MHz

Collector capacitance at f = 1 MHz

IE =Ie = 0; VCB =15V

typ

120 pF

160 pF

Feedback capacitance at f = 1 MHz

IC = 200 mA; VCE =15V

Cre

typ

80 pF

Collector-stud capacitance

Ccs

typ

2 pF

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