BLW898 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1996 Jul 16

Philips Semiconductors

Product speciﬁcation

UHF linear power transistor

BLW898

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)CBO

collector-base breakdown voltage

IC = 15 mA; IE =0

−−

V(BR)CEO

collector-emitter breakdown voltage

IC = 30 mA; IB =0

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 0.6 mA; IC = 0

2.5

−−

ICBO

collector-base leakage current

VBE = 0; VCB =28V

−−

1.5

ICEO

collector-emitter leakage current

VCE =20V

−−

3mA

hFE

DC current gain

VCE = 25 V; IC = 1.1 A

−

140

collector capacitance

VCB = 25 V; IE =ie =0;

f = 1 MHz

−

Cre

feedback capacitance

VCB = 25 V; IC = 0; f = 1 MHz −

−

Fig.3

DC current gain as a function of collector

current; typical values.

VCE = 25 V; tp = 500 µs; δ =<1%.

handbook, halfpage

hFE

IC (A)

160

120

MGD532

Fig.4

Collector capacitance as a function of

collector-base voltage; typical values.

IE =ie = 0; f = 1 MHz.

handbook, halfpage

(pF)

MGD533

VCB (V)

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