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BR211-240 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BR211-240 Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 7 page ![]() Philips Semiconductors Product specification Breakover diodes BR211 series Fig.5. On-state current as a function of on-state voltage; t p = 200 µs to avoid excessive dissipation. Fig.6. Maximum off-state current as a function of temperature. Fig.7. Switching current as a function of junction temperature. Fig.8. Minimum holding current as a function of temperature. Fig.9. Typical junction capacitance as a function of off-state voltage, f = 1 MHz; T j = 25˚C. Fig.10. Transient thermal impedance. Z th j-a = f(tp). 123 4 0 5 10 15 20 Tj = 25 C Tj = 150 C IT / A VT / V typ max -50 0 50 150 Tj / C IH / A 0.001 0.01 0.1 10 100 1 min -40 -20 0 20 40 60 80 100 Tj / C ID / uA 0.1 1 10 100 max VD / V 1 10 100 1000 1 10 100 Cj / pF BR211-280 BR211-140 typ -50 0 50 150 Tj / C IS / A 0.001 0.01 0.1 10 100 1 max typ min tp P t D Zth / (K/W) 0.1 1 10 100 1000 10us 1ms 0.1s 10s 1000s tp / s BR211 August 1996 4 Rev 1.200 |
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