Philips Semiconductors

Product specification

Breakover diodes

BR211 series

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

R

th j-e

Thermal resistance junction to

-

22

-

K/W

envelope

R

th j-a

Thermal resistance junction to

mounted as fig:12

-

105

K/W

ambient

Z

th j-a

Thermal impedance junction to

t

-

2.62

-

K/W

ambient

R

th e-tp

Thermal resistance envelope to lead length = 5 mm

-

15

-

K/W

tie point

lead length = 10 mm

-

30

-

K/W

R

th e-a

Thermal resistance envelope to lead length = 5 mm

-

440

-

K/W

ambient

lead length = 10 mm

-

350

-

K/W

R

th tp-a

Thermal resistance tie point to

mounted as fig:12

-

70

-

K/W

ambient

mounted with 1 cm

-

55

-

K/W

laminate per lead.

mounted with 2.25 cm2 copper

-

45

-

K/W

laminate per lead

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

TM

1

On-state voltage

I

-

-

2.5

V

V

(BR)

Avalanche voltage (min)

I

V

(BO)

Breakover voltage (max)

I

≤ I

BR211-140

123

140

157

V

BR211-160

140

160

180

V

BR211-180

158

180

202

V

BR211-200

176

200

224

V

BR211-220

193

220

247

V

BR211-240

211

240

269

V

BR211-260

228

260

292

V

BR211-280

246

280

314

V

V

V

S

(br)

Temperature coefficient of V

(BR)

-

+0.1

-

%/K

I

H

2

Holding current

T

150

-

-

mA

T

100

-

-

mA

I

S

3

Switching current

t

10

200

1000

mA

I

D

4

Off-state current

V

-

-

10

µA

1 Measured under pulsed conditions to avoid excessive dissipation

2 The minimum current at which the diode will remain in the on-state

3 The avalanche current required to switch the diode to the on-state

4 Measured at maximum recommended continuous voltage. Illuminance

≤ 500 lux (daylight); relative

humidity < 65%.

August 1996

2

Rev 1.200