BR211-240 datasheet(3/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Breakover diodes

BR211 series

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

D/dt

Linear rate of rise of off-state

(DM) = 85% V(BR)min; Tj = 70 ˚C

2000

µs

voltage that will not trigger any

device

Off-state capacitance

D = 0 V; f = 1 kHz to 1 MHz

100

Fig.1. Definition of breakover diode characteristics.

Fig.2. Test waveform for high voltage impulse (I

TSM1)

according to CCITT vol IX-Rec K17.

Fig.3. Maximum permissible non-repetitive on-state

current based on sinusoidal currents; f = 50 Hz;

device triggered at the start of each pulse; T

j = 70˚C

prior to surge.

Fig.4. Normalised avalanche breakdown voltage V

(BR)

and V

(BO) as a function of temperature.

V(BO)

current

voltage

Symbol

V(BR)

I(BR)

Symmetric BOD

100

1000

10000

BR211

Number of impulses

ITSM / A

ITSM2

time

100%

90%

50%

30%

ITSM

10us

700us

time

current

-40

-20

100

Tj / C

V(BR)(Tj)

1.06

1.04

1.02

1.00

0.98

0.96

0.94

0.92

0.90

V(BR)(25 C)

August 1996

Rev 1.200

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