BS107 datasheet(6/12 Pages) PHILIPS

6 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BS107

Fig.6

Typical on-resistance as a function of drain

current; Tj =25 °C.

handbook, halfpage

MDA702

ID (mA)

102

RDSon

(

Ω)

VGS = 3 V

4 V

5 V

10 V

Fig.7

Typical capacitances as a function of

drain-source voltage; VGS = 0; f = 1 MHz;

Tj =25 °C.

handbook, halfpage

VDS (V)

(pF)

MDA703

Crss

Ciss

Coss

−50

150

2.8

0.4

2.4

100

1.6

1.2

0.8

MDA704

Tj (°C)

(1)

(2)

Fig.8

Temperature coefficient of drain-source

on-resistance;

typical RDS(on) at 150 mA/10 V

DS on

() at Tj

DS on

() at 25 °C

----------------------------------------------

;

(1) ID = 150 mA; VGS =10V

(2) ID = 20 mA; VGS = 2.6 V

handbook, halfpage

−50

Tj (°C)

150

1.2

0.7

1.1

100

0.9

0.8

MDA705

Fig.9

Temperature coefficient of gate-source

threshold voltage;

typical VGS(th) at 1 mA.

GS th

() at Tj

GS th

() at 25 °C

---------------------------------------------

;

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