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BS208 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BS208
Description  P-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BS208 Datasheet(HTML) 2 Page - NXP Semiconductors

  BS208 Datasheet HTML 1Page - NXP Semiconductors BS208 Datasheet HTML 2Page - NXP Semiconductors BS208 Datasheet HTML 3Page - NXP Semiconductors BS208 Datasheet HTML 4Page - NXP Semiconductors BS208 Datasheet HTML 5Page - NXP Semiconductors BS208 Datasheet HTML 6Page - NXP Semiconductors BS208 Datasheet HTML 7Page - NXP Semiconductors BS208 Datasheet HTML 8Page - NXP Semiconductors BS208 Datasheet HTML 9Page - NXP Semiconductors Next Button
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April 1995
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BS208
FEATURES
• Direct interface to C-MOS
• High-speed switching
• No secondary breakdown.
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a TO-92
envelope. Intended for use in relay,
high-speed and line transformer
drivers.
PINNING - TO-92
PIN
DESCRIPTION
1
source
2
gate
3
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
2
MAM149
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage (DC)
−−
−200
V
VGSO
gate-source voltage (DC)
open drain
−−
±20
V
 Y
fs
forward transfer admittance
ID = −200 mA; VDS = −25 V
100
200
−
mS
ID
drain current (DC)
−−
−0.2
A
RDS(on)
drain-source on-state resistance
VGS = −10 V; ID = −200 mA
−
10
14
Ω
Ptot
total power dissipation
Tamb =25 °C
−−
0.83
W



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