BS208 datasheet(4/12 Pages) PHILIPS

4 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BS208

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. Measured at f = 1 MHz;

−V

DS = 25 V; VGS =0.

−VGS = 0 to 10 V; −ID = 250 mA; −VDD =50V.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

−V(BR)DSS

drain-source breakdown

voltage

−VGS =0

−ID =10 µA

200

−

-V

−I

DSS

drain-source leakage current

−VDS = 130 V

VGS =0

−−

µA

−IDSS

drain-source leakage current

−VDS =70V

−VGS = 0.2 V

−−

µA

−I

GSS

gate-source leakage current

−VGS =20V

VDS =0

−−

100

−VGS(th)

gate-source threshold

voltage

VGS =VDS

−ID =1mA

0.8

−

2.8

RDS(on)

drain-source on-resistance

−VGS =10V

−ID = 200 mA

−−

Ω

 Y

fs 

transfer admittance

−VDS =25V

−ID = 200 mA

100

200

−

Ciss

input capacitances

note 1

−

Coss

output capacitance

note 1

−

Crss

feedback capacitance

note 1

−

515

ton

turn-on time

note 2

−

510

toff

turn-off time

note 2

−

Fig.3 Switching times test circuit.

handbook, halfpage

MBB689

Ω

VDD = −50 V

0 V

−10 V

Fig.4 Input and output waveforms.

handbook, halfpage

MBB690

10 %

90 %

10 %

ton

toff

OUTPUT

INPUT

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