2000 Jul 19

6

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

Fig.5 Switching times test circuit with input and output waveforms.

handbook, full pagewidth

MAM274

90 %

10 %

10 %

90 %

Vin

Vout

td(on)

ton

toff

tf

tr

td(off)

0

0

VDD

RL

Vout

Vin

Fig.6

Gate-source and drain-source voltages as

functions of total gate charge; typical values.

handbook, halfpage

QG (pC)

VGS

(V)

VDS

(V)

MGM196

(1)

(2)

0

2

4

6

8

10

12

0

5

10

15

20

25

30

Fig.7

Output characteristics; typical values.

handbook, halfpage

0

3

2

1

0

21

0

MGM194

468

VDS (V)

ID

(A)

(1)(2) (3)(4) (5)

(6)

(8)

(9)

(7)