BSH101 datasheet(7/12 Pages) PHILIPS

7 / 12 page

2000 Jul 19

Philips Semiconductors

Product specification

N-channel enhancement mode

MOS transistor

BSH101

Fig.8 Transfer characteristic; typical values.

VDS = 10 V; Tamb =25 °C; tp = 300 µs; δ =0.

handbook, halfpage

MGM195

234

VGS (V)

(A)

Fig.9

Capacitance as a function of drain-source

voltage; typical values.

VGS = 0; f = 1 MHz; Tamb =25 °C.

handbook, halfpage

160

120

MGM193

(pF)

VDS (V)

Ciss

Coss

Crss

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

VGD =0.

(1) Tamb = 150 °C.

(2) Tamb =25 °C.

(3) Tamb = −65 °C.

handbook, halfpage

0.4

1.2

0.4

1.6

1.2

0.8

MGM197

0.8

VSD (V)

(A)

(3)

(2)

(1)

Fig.11 Drain-source on-state resistance as a

function of gate-source voltage; typical

values.

Tamb =25 °C; tp = 300 µs; δ =0.

(1) ID = 175 mA.

(2) ID = 350 mA.

(3) ID = 700 mA.

(4) ID =1A.

(5) ID = 1.4 A.

(6) ID = 2.8 A.

handbook, halfpage

10−1

MGM198

(5)

(4)

(3)

(2)

(1)

(6)

RDSon

(

Ω)

VGS (V)

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