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BSH101 Datasheet(PDF) 8 Page - NXP Semiconductors |
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BSH101 Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 12 page ![]() 2000 Jul 19 8 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor BSH101 Fig.12 Temperature coefficient of gate-source threshold voltage as a function of junction temperature; typical values. VGSth at VDS =VGS; ID = 1 mA. k V GSth at Tj V GSth at 25 ° C -------------------------------------- = handbook, halfpage −65 185 0 0.4 MGM199 0.8 1.2 −15 35 85 135 Tj (°C) k Fig.13 Temperature coefficient of drain-source on-resistance as a function of junction temperature; typical values. (1) RDSon at VGS = 10 V; ID = 350 mA. (2) RDSon at VGS = 4.5 V; ID = 170 mA. k R DSon at Tj R DSon at 25 ° C ----------------------------------------- = handbook, halfpage −65 185 2.0 0 0.4 MGM200 0.8 1.2 1.6 −15 35 85 135 Tj (°C) k (2) (2) (1) (1) |
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