Philips Semiconductors

Product specification

N-channel enhancement mode

BSH106

MOS transistor

Fig.13. Typical turn-on gate-charge characteristics.

V

Fig.14. Typical reverse diode current.

I

BSH105

0

1

2

3

4

5

6

7

8

9

10

02

468

Gate charge, QG (nC)

VDD = 20 V

RD = 20 Ohms

Tj = 25 C

Gate-source voltage, VGS (V)

BSH105

-5

-4.5

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0

Drain-Source Voltage, VSDS (V)

Source-Drain Diode Current, IF (A)

Tj = 25 C

150 C

August 1998

5

Rev 1.000