Philips Semiconductors

Product specification

N-channel enhancement mode

BSH106

MOS transistor

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Very low threshold voltage

V

• Fast switching

• Logic level compatible

I

• Subminiature surface mount

package

R

V

GENERAL DESCRIPTION

PINNING

SOT363

N-channel, enhancement mode,

PIN

DESCRIPTION

logic

level,

field-effect

power

transistor. This device has very low

1,2,5,6 drain

threshold voltage and extremely

fast switching making it ideal for

3

gate

battery powered applications and

high speed digital interfacing.

4

source

The BSH106 is supplied in the

SOT363

subminiature

surface

mounting package.

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

DS

Drain-source voltage

-

20

V

V

DGR

Drain-gate voltage

R

-20

V

V

GS

Gate-source voltage

-

± 8V

I

D

Drain current (DC)

T

-

1.05

A

T

-

0.67

A

I

DM

Drain current (pulse peak value)

T

-

4.2

A

P

tot

Total power dissipation

T

-

0.417

W

T

-

0.17

W

T

Storage & operating temperature

- 55

150

˚C

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

R

th j-a

Thermal resistance junction to

FR4 board, minimum

300

-

K/W

ambient

footprint

d

g

s

1

3

5

Top view

2

4

6

August 1998

1

Rev 1.000