BSH106 datasheet(3/7 Pages) PHILIPS

3 / 7 page

Philips Semiconductors

Product specification

N-channel enhancement mode

BSH106

MOS transistor

Fig.1. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25 ˚C = f(Ta)

Fig.2. Normalised continuous drain current.

ID% = 100

⋅I

D/ID 25 ˚C = f(Ta); conditions: VGS ≥ 4.5 V

Fig.3. Safe operating area. T

a = 25 ˚C

D & IDM = f(VDS); IDM single pulse; parameter tp

Fig.4. Transient thermal impedance.

th j-a = f(t); parameter D = tp/T

Fig.5. Typical output characteristics, T

j = 25 ˚C.

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

DS(ON) = f(ID); parameter VGS

Normalised Power Dissipation, PD (%)

100

120

100

125

150

Ambient Temperature, Ta (C)

BSH105

0.1

100

1000

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00

1E+01

Pulse width, tp (s)

Peak Pulsed Drain Current, IDM (A)

single pulse

D = 0.5

0.2

0.1

0.05

0.02

D = tp/T

Normalised Drain Current, ID (%)

100

120

100

125

150

Ambient Temperature, Ta (C)

BSH105

0.5

1.5

2.5

3.5

4.5

0.5

1.5

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

1.1 V

1.5 V

1.3 V

1.7 V

4.5V

Tj = 25 C

2.5V

VGS = 1.9 V

2.1 V

BSH105

0.01

0.1

100

0.1

100

Drain-Source Voltage, VDS (V)

Peak Pulsed Drain Current, IDM (A)

d.c.

100 ms

10 ms

RDS(on) = VDS/ ID

tp = 100 us

1 ms

BSH105

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

1.5

2.5

3.5

4.5

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS = 4.5 V

2.5 V

2.1 V

1.9 V

1.7 V

Tj = 25 C

1.5 V

August 1998

Rev 1.000

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