BSP130 datasheet(5/12 Pages) PHILIPS

Part #	BSP130

Description	N-channel enhancement mode vertical D-MOS transistor

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP130

Fig.6 Typical output characteristics.

Tj =25 °C.

handbook, halfpage

1.2

0.8

VDS (V)

(A)

0.4

MRC217

P = 1.5 W

4 V

3.5 V

3 V

2 V

5 V

2.5 V

VGS = 10 V

Fig.7 Typical transfer characteristics.

VDS = 10 V; Tj =25 °C.

handbook, halfpage

1.2

0.4

0.8

(A)

VGS (V)

MRC223

Fig.8

Drain-source on-resistance as a function of

drain current, typical values.

Tj =25 °C.

handbook, halfpage

MRC219

RDSon

(

Ω)

ID (A)

110

10−1

10−2

4 V

5 V

10 V

3 V 3.5 V

2.5 V

VGS = 2 V

Fig.9

Drain-source on-resistance as a function of

gate-source voltage, typical values.

VDS = 100 mV; Tj =25 °C.

handbook, halfpage

010

RDSon

(

Ω)

MRC220

VGS (V)

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