BSP130 datasheet(3/12 Pages) PHILIPS

3 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BSP130

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL RESISTANCE

Note

1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.

STATIC CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

300

±VGSO

gate-source voltage

open drain

−

DC drain current

−

300

IDM

peak drain current

−

1.4

Ptot

total power dissipation

up to Tamb = 25 °C; note 1

−

1.5

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

SYMBOL

PARAMETER

THERMAL RESISTANCE

Rth j-a

from junction to ambient; note 1

83.3 K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

V(BR)DSS

drain-source breakdown voltage

ID = 10 µA; VGS = 0

300

−−

±I

GSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

100

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS = VGS

0.8

−

RDS(on)

drain-source on-resistance

ID = 20 mA; VGS = 2.4 V

−

7.9

Ω

ID = 250 mA; VGS = 10 V

−

6.7

Ω

IDSS

drain-source leakage current

VDS = 240 V; VGS = 0

−−

100

 Y

fs

transfer admittance

ID = 250 mA; VDS = 25 V

200

380

−

Ciss

input capacitance

VDS = 25 V; VGS = 0;

f = 1 MHz

−

Coss

output capacitance

VDS = 25 V; VGS = 0;

f = 1 MHz

−

Crss

feedback capacitance

VDS = 25 V; VGS = 0;

f = 1 MHz

−

2.6

Switching times (see Figs 2 and 3)

ton

turn-on time

ID = 250 mA; VDD = 50 V;

VGS = 0 to 10 V

−

2.5

toff

turn-off time

ID = 250 mA; VDD = 50 V;

VGS = 10 to 0 V

−

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