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BSP130 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BSP130 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() April 1995 7 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP130 Fig.12 Temperature coefficient of drain-source on-resistance. Typical RDS(on); (1) ID = 250 mA; VGS =10V. (2) ID = 20 mA; VGS = 2.4 V. k R DS(on) at Tj R DS(on) at 25 ° C ----------------------------------------- = handbook, halfpage −50 0 (1) (2) 50 k Tj (°C) 150 2.5 0 2 100 1.5 1 0.5 MRC215 Fig.13 Temperature coefficient of gate-source threshold voltage. Typical VGS(th) at 1 mA. k V GS(th) at Tj V GS(th) at 25 ° C ------------------------------------------ . = handbook, halfpage −50 0 50 k Tj (°C) 150 1.25 0 1 100 0.75 0.5 0.25 MRC216 |
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