BSP254 datasheet(2/12 Pages) PHILIPS

2 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP254; BSP254A

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No secondary breakdown.

DESCRIPTION

P-channel vertical D-MOS transistor

in a TO-92 variant envelope and

intended for use as a line current

interruptor in relay, high-speed and

line transformer drivers.

PINNING - TO-92 variant BSP254

PINNING - TO-92 variant BSP254A

DESCRIPTION

gate

drain

source

DESCRIPTION

source

gate

drain

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

VDS

drain-source

voltage

−−−250 V

VGSO

gate-source

voltage

open drain

−−±20

 Y

fs

forward transfer

admittance

ID = −200 mA;

VDS = −25V

100

200

−

drain current (DC)

−−−0.2

RDS(on)

drain-source

on-state resistance

VGS = −10 V;

ID = −200 mA

−

Ω

Ptot

total power

dissipation

Tamb =25 °C

−−

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM147

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