BSP254 datasheet(4/12 Pages) PHILIPS

4 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP254; BSP254A

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Notes

1. Measured at f = 1 MHz;

−VDS = 25 V; VGS =0.

−VGS = 0 to 10 V; −ID = 250 mA; −VDD = 50 V.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

−V(BR)DSS

drain-source breakdown voltage

−VGS = 0

−ID =10 µA

250

−−

−I

DSS

drain-source leakage current

−VDS = 200 V

VGS =0

−−

µA

±IGSS

gate-source leakage current

±VGS = 20 V

VDS =0

−−

100

−V

GS(th)

gate-source threshold voltage

VGS = VDS

−ID = 1 mA

0.8

−

2.8

RDS(on)

drain-source on-resistance

−VGS = 10 V

−ID = 200 mA;

−

Ω

 Y

fs

transfer admittance

−VDS = 25 V

−ID = 200 mA

100

200

−

Ciss

input capacitance

note 1

−

Coss

output capacitance

note 1

−

Crss

feedback capacitance

note 1

−

615

ton

turn-on time

note 2

−

510

toff

turn-off time

note 2

−

Fig.3 Switching times test circuit.

handbook, halfpage

MBB689

Ω

VDD = −50 V

0 V

−10 V

Fig.4 Input and output waveforms.

handbook, halfpage

MBB690

10 %

90 %

10 %

ton

toff

OUTPUT

INPUT

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