1999 Apr 15

2

Philips Semiconductors

Product specification

PNP switching transistors

BSR15; BSR16

FEATURES

• High current (max. 600 mA)

• Low voltage (max. 60 V).

APPLICATIONS

• Medium power switching.

DESCRIPTION

PNP switching transistor in a SOT23 plastic package.

NPN complements: BSR13 and BSR14.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

BSR15

T7

∗

BSR16

T8

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM256

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−60

V

collector-emitter voltage

open base

BSR15

−−40

V

BSR16

−−60

V

emitter-base voltage

open collector

−−5V

collector current (DC)

−−600

mA

peak collector current

−−800

mA

peak base current

−−200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C