BSR16 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1999 Apr 15

Philips Semiconductors

Product speciﬁcation

PNP switching transistors

BSR15; BSR16

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

BSR15

IE = 0; VCB = −50 V

−−20

IE = 0; VCB = −50 V; Tj = 150 °C

−−20

µA

collector cut-off current

BSR16

IE = 0; VCB = −50 V

−−10

IE = 0; VCB = −50 V; Tj = 150 °C

−−10

µA

IEBO

emitter cut-off current

IC = 0; VEB = −5V

−−50

hFE

DC current gain

IC = −0.1 mA; VCE = −10 V

BSR15

−

BSR16

−

DC current gain

IC = −1 mA; VCE = −10 V

BSR15

−

BSR16

100

−

DC current gain

IC = −10 mA; VCE = −10 V

BSR15

−

BSR16

100

−

DC current gain

IC = −150 mA; VCE = −10 V; note 1

100

300

DC current gain

IC = −500 mA; VCE = −10 V; note 1

BSR15

−

BSR16

−

VCEsat

collector-emitter saturation

voltage

IC = −150 mA; IB = −15 mA

−−400

IC = −500 mA; IB = −50 mA

−−1.6

VBEsat

base-emitter saturation voltage

IC = −150 mA; IB = −15 mA

−−1.3

IC = −500 mA; IB = −50 mA

−−2.6

collector capacitance

IE =ie = 0; VCB = −10 V; f = 1 MHz

−

8pF

emitter capacitance

IC =ic = 0; VEB = −2 V; f = 1 MHz

−

transition frequency

IC = −50 mA; VCE = −20 V; f = 100 MHz 200

−

MHz

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