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Low EMI Clock Generator for Intel
810E Chipset Systems
Cypress Semiconductor Corporation
525 Los Coches St.
Document#: 38-07053 Rev. **
05/03/01
Milpitas, CA 95035. Tel: 408-263-6300, Fax: 408-263-6571
Page 14 of 18
http://www.cypress.com
APPROVED PRODUCT
C9812
Output Buffer Characteristics (Cont.)
Buffer Characteristics for SDRAM
Characteristic
Symbol
Min
Typ
Max
Units
Conditions
Pull-Up Current
IOH1
-72
-116
-198
mA
Vout =VDD - 1. 0 V
Pull-Up Current
IOH2
-68
-110
-188
mA
Vout = 1. 4 V
Pull-Down Current
IOL1
23
34
53
mA
Vout = 0.4 V
Pull-Down Current
IOL1
64
98
159
mA
Vout = 1.5 V
Dynamic Output Impedance
Z0
10
24
Ω
Rise Time Min
Between 0.4 and 2.4 V
Tr
0.4
-
1.6
nS
30pF Load
Fall Time Max
Between 0.4 and 2.4 V
Tf
0.4
-
1.6
nS
30pF Load
VDD=VDDS=3.3V
±5%, VDDC=VDDI=2.5±5%, TA=0 to 70ºC
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