BST84 datasheet(2/12 Pages) PHILIPS

2 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BST84

DESCRIPTION

N-channel vertical D-MOS transistor

in SOT89 envelope and designed for

use as line current interrupter in

telephone sets and for application in

relay, high-speed and

line-transformer drivers.

FEATURES

• Direct interface to C-MOS, TTL,

etc.

• High-speed switching

• No second breakdown

QUICK REFERENCE DATA

PINNING - SOT89

Drain-source voltage

VDS

max.

200 V

Gate-source voltage (open drain)

±VGSO

max.

20 V

Drain current (DC)

max.

250 mA

Total power dissipation up to Tamb =25 °CPtot

max.

1 W

Drain-source ON-resistance

typ.

max.

Ω

ID = 250 mA; VGS = 10 V

RDS(on)

Transfer admittance

ID = 250 mA; VDS = 15 V

 Yfs

typ.

250 mS

1 = source

2 = gate

3 = drain

PIN CONFIGURATION

Fig.1 Simplified outline and symbol.

Marking: KN

handbook, 2 columns

MBB076 - 1

handbook, halfpage

132

Bottom view

MSB013

BST84 Datasheet(PDF) 2 Page - NXP Semiconductors

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