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BST84 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BST84 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() April 1995 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BST84 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE Note 1. Transistor mounted on a ceramic substrate with area of 2.5 cm2 and thickness of 0.7 mm. Drain-source voltage VDS max. 200 V Gate-source voltage (open drain) ±V GSO max. 20 V Drain current (DC) ID max. 250 mA Drain current (peak) IDM max. 800 mA Total power dissipation up to Tamb = 25 °C (note 1) Ptot max. 1 W Storage temperature range Tstg −65 to + 150 °C Junction temperature Tj max. 150 °C From junction to ambient (note 1) Rth j-a = 125 K/W |
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