BST84 datasheet(4/12 Pages) PHILIPS

4 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

N-channel enhancement mode vertical

D-MOS transistor

BST84

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed

Drain-source breakdown voltage

ID = 100 µA; VGS =0

V(BR)DSS

min.

200 V

Drain-source leakage current

VDS = 160 V; VGS =0

IDSS

max.

µA

Gate-source leakage current

VGS = 20 V; VDS =0

IGSS

max.

100 nA

Gate threshold voltage

min.

max.

0.8

2.8

ID = 1 mA; VDS =VGS

VGS(th)

Drain-source ON-resistance

typ.

max.

Ω

ID = 250 mA; VGS = 10 V

RDS(on)

Transfer admittance

ID = 250 mA; VDS = 15 V

 Yfs

typ.

250 mS

Input capacitance at f = 1 MHz

VDS = 10 V; VGS =0

Ciss

typ.

max.

Output capacitance at f = 1 MHz

VDS = 10 V; VGS =0

Coss

typ.

max.

Feedback capacitance at f = 1 MHz

VDS = 10 V; VGS = 0

Crss

typ.

max.

Switching times (see Figs 2 and 3)

typ.

max.

ID = 250 mA; VDD = 50 V; VGS = 0 to 10 V

ton

toff

typ.

max.

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